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Information × Registration Number 0203U008210, 0100U005337 , R & D reports Title The modification of interface in amorphous film-silicium substrate of completed chalcogenides. popup.stage_title Head Dovgoshej M.I., Registration Date 26-03-2003 Organization Uzhgorod National University popup.description2 The technology of modification by atoms of metal heterocmtrukctures transition layer are developed.The heterocmtructures Me-Si-X-Ge-As-Se-Me, Me-Al,Sb,Bi,Ag.The electrophysical and optical properties was investigated.The theoretical energy model of heterostructure transition layer mith modification are calculated. The influence contact materials and modeficator type on the electrophysical properties of heterostructures are performed. Product Description popup.authors popup.nrat_date 2020-04-02 Close