Registration Number
0203U008210,
0100U005337
, R & D reports
Title
The modification of interface in amorphous film-silicium substrate of completed chalcogenides.
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Head
Dovgoshej M.I.,
Registration Date
26-03-2003
Organization
Uzhgorod National University
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The technology of modification by atoms of metal heterocmtrukctures transition layer are developed.The heterocmtructures Me-Si-X-Ge-As-Se-Me, Me-Al,Sb,Bi,Ag.The electrophysical and optical properties was investigated.The theoretical energy model of heterostructure transition layer mith modification are calculated. The influence contact materials and modeficator type on the electrophysical properties of heterostructures are performed.
Product Description
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2020-04-03
