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Information × Registration Number 0203U008646, 0101U002050 , R & D reports Title The investigation of the formation of epitaxial disilicide Co films on the silicon popup.stage_title Head Makogon Yurij Mykolajovych, Registration Date 19-12-2003 Organization National Technscal University of Ukraine "Kiev Polytechnic Institute". popup.description2 The regularities of the epitaxial film CoSi2 formation were established with helping methods of X-ray diffraction, Auger-electron spectroscopy, second ion mass-spectrometry, X-ray tenzometry, transmission electron microscopy, resistometry. In work it is decides the problem of the epitaxial film CoSi2 formation on the silicon single crystal with orientation (100) with using TІМЕ (titanium intermediate epitaxy) and ОМЕ (oxide intermediate epitaxy) in the high vacuum (10-4-10-5Па). In the work they are proposed the heatl treatment conditions and optimal layer thicknesses of the Ті and SiО2, which cause the formation of the ternary compound layer Со-Ті-Si, playing the role of the "diffusion membrane"and controlling the mass transfer process of the cobalt and silicon atoms for the growth of the CoSi2 epitaxial film. In the Со(19,3нм)/Ti(4,7нм)/SiО2(1,91нм)/Si(100) thin film system heat treatment at 1100К, 30s in the current nitrogen atmosphere result to the formation of the CoSi2 epitaxial film with thickness about 60 nm. Thermostability of the formed CoSi2 epitaxial film on Si(100) preserves in the range 1000-1300 К. The film has metallic type of conductivity, resistanse is 15 мкОм.см. Product Description popup.authors popup.nrat_date 2020-04-02 Close