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Information × Registration Number 0204U000015, 0101U006100 , R & D reports Title Luminescence and memory effects in SiO2 layer containing Si/Ge nanoclusters popup.stage_title Head Lysenko Volodimir Sergievich, Registration Date 09-01-2004 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The object of investigations: light-emitted devices. The project's objective is to study the charge transport, injection and charge accumulation in Si (Ge)-nanoclusters rich SiO2 , and to optimize techniques for manufacturing light emitted Si-based devices. The investigative techniques used are following: I-V, C-V and electro luminescent measurements, computer fitting. The main parameters (cross section, effective concentration) of traps, located in Si (Ge)-implanted SiO2, have been determined. Complex structural, electrical and optoelectronic research of MOSLEDs with Ge nanoclusters-rich oxides allowed to find optimal regimes for manufacturing blue-violent light emitted Si-based devices. It's shown, that low-temperature RF hydrogen plasma treatment is very effective technique for ordering defect amorphous oxide matrix and for increase of electrical stability of EL devices. Product Description popup.authors popup.nrat_date 2020-04-02 Close