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Information × Registration Number 0204U000106, 0198U003508 , R & D reports Title Working out of the high quality diphosphide cadmium and zinc crystals and creation of laser technique elements on it's basis popup.stage_title Head Fekeshgazi I.V., Registration Date 15-01-2004 Organization Institute of Semiconductor Physics popup.description2 Object of research were diphosphide cadmium and zinc, from which were made experimental samples of stablizers of a field radiation. and prolongation of laser pujses grneration. The purpose of work was, on a basis wirking out by the Byelorussian party of cadmium and zinc crystals, develop the designs and make experimental samples of stabilizers spatiel- temporary distributions of a flied of laser radiation and elements of lengthening the duration of pulss of solid state lasers generation and estabilize the structures of antirefctive coatigs and development the technologies of their deposition on a surface of experimenals samples of stabilizers spotial-temporary distributions of a field and elements of lenghening the laser puser pulse duration and also to measure their specification. Research methods include: polarizing invectigation of crystals optical guality, nonlinear optics and laser spectrosopy, light interference in unegual thickness multi-layer dielectric systems, The optical technigues of measurement the optical guality of unegual gyrotrophic crystals and orientation relatively of crystallography coonrdinate axes were advenced and organized5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close
R & D report
Head: Fekeshgazi I.V.. Working out of the high quality diphosphide cadmium and zinc crystals and creation of laser technique elements on it's basis. (popup.stage: ). Institute of Semiconductor Physics. № 0204U000106
1 documents found

Updated: 2026-03-27