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Information × Registration Number 0204U003008, 0103U004861 , R & D reports Title Investigation of the structure and electro-physical properties of Si monocrystals growed by means of the electron-beam floating zone (EBFZ) popup.stage_title Head Barans'kyj Petro Ivanovyych, Registration Date 16-01-2004 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The new scientifiic information about most important electrophysical parameters (such as resistivity, carrier concentration and its mobility) and structural perfection of Si-crystals which have been growed by means electron-beam floating zone have been obtained Product Description popup.authors popup.nrat_date 2020-04-02 Close