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Information × Registration Number 0204U003234, 0102U001168 , R & D reports Title Рhysical and technological basis of laser epitaxy thin-filmed heterostructures based on AIIBVI compounds for the new generation of infrared photoelectronic. popup.stage_title Head Lopatynskyj Ivan Yevstachovycz, Registration Date 19-02-2004 Organization Lviv Polytechnic National University popup.description2 The films of CdHgTe on alternative substrates were grown by a pulsed laser deposition technique. Study of initial stages of CdHgTe films by high energy electron-diffraction (HEED) investigation, transmission electron microscopy (TEM) and scanning electron microscopy (SEM) was carried out. It is analyzed the causes of the twinning effect in thin films. The crystal structures and surface morphology of CdHgTe epitaxial films grown by molecular-beam epitaxy on Si and GaAs substrates were investigated. Some mechanical properties epitaxial films, elastic properties of interfaces and characteristic misfit dislocations are investigated. Electrophysical and photoelectric parameters of epitaxial films were measured. Product Description popup.authors popup.nrat_date 2020-04-02 Close