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Information × Registration Number 0204U003256, 0102U001191 , R & D reports Title Development and investigation of complex-doped A3B5 semiconductor materials for development of radiation resistant microsensors popup.stage_title Head Matkovskii A.O., Registration Date 20-02-2004 Organization Lviv Polytechnic National University popup.description2 Indium antimonide microcrystals have been investigated. They were grown by mean of CTRs and doped during the growth process with Ge, Si, Bi impurities and <Ge:Te>, <Sn:Bi> impurity complexes. Selection of optimal technological conditions of growth was made on the base of thermodynamical calculations of physical-chemical processes. Morphological and electrophysical features of the grown at the simple doping microcrystals has been investigated, calculations of InSb<Bi> crystal growth kinetic parameters have been carried out. Optimal proportions of doping components have been determined for InSb microcrystals obtaining with stable electrophysical parameters under the extreme operation conditions. Product Description popup.authors popup.nrat_date 2020-04-02 Close