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Information × Registration Number 0204U003382, 0101U000411 , R & D reports Title The peculiarities of formation of radiation defects in semiconductors with neutral impurities and previously irradiatied. popup.stage_title Head Litovchenko Piotr, Registration Date 15-03-2004 Organization Institute For Nuclear Research Of National Academy Of Sciences Of Ukraine popup.description2 It was shown that increasing of radiation hardness of Si and devices on it base it is possible by previous irradiated of material with following annealing; it results in creation of effective sinks for initial radiation defects and impurities. The thin structure of VA characteristies of gamma-irradiated light-diodes GaP was indicated at temperatures low then 90K.5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close