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Information × Registration Number 0204U005205, 0101U004215 , R & D reports Title Development of new non-destructive methods for charaterisation of epitaxial semiconductor structures popup.stage_title Head Molodkin Vadim Borysovych, Registration Date 08-04-2004 Organization Institute for metal physics NAS Ukkraine popup.description2 The systematical investigation of multilayered semiconductor structures with quantum well has been performed by using the high-resolution X-ray diffractometry. The nitrogen content in quantum well and barrier layers has been determined by the simulation of measured rocking curves. Also, the influence of smearing the indium content profile in quantum well on rocking curves has been established. The high sensitivity of rocking curves to these structural parameters has been demonstrated. Product Description popup.authors popup.nrat_date 2020-04-02 Close