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Information × Registration Number 0205U000136, 0103U006711 , R & D reports Title Development of laser methods of formation nanoscale structures of silicon and research of their radiating properties with the purpose of creation of elements of silicon optoelectronics popup.stage_title Head Manoilov E. G., Registration Date 17-01-2005 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 A new low-dimensional composite nanostructures with the rebuilt energy structure on a basis of quantum-size silicon nanocrystals are created. Regularities of photoluminescence (PL) in visible range of a spectrum are established at a room temperature of nanocrystalline silicon (nc-Si) films produced by a method of impulse laser deposition. Technological guidelines for creation nc-Si films with intensive and stable PL are fulfilled. On a basis nc-Si films experimental samples of heterostructures for photodetection and electroluminescent devices are created, mechanisms of current conducting in these structures are established. Product Description popup.authors popup.nrat_date 2020-04-02 Close