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Information × Registration Number 0205U000371, 0102U002249 , R & D reports Title Physical and chemical conditions of formation of Shottky diodes on a basis of narrow-zone semiconductors popup.stage_title Head Velichko S.P., Registration Date 26-01-2005 Organization Kirovograd state pedagogical university named by Volodymyr Vynnychenko popup.description2 The work objective is to develop a technology of producing Shottki photodiode with a thin, transient, transparent dielectric layer for 9-26 mkm waves on the basis of low-pressed epitaxial layers for 4-component hard solvencies Pb1-xSnxTe1-ySey in accord with the parameters of crystal structure with semiconduct and dielectric objects by methods of liquor epitasis and thermo-vacuum layer-building. The improvement of quality of omic and strengthening contacts makes the real photoresistor's sensitivity close to its theoretical parameters and prolongs the term of equipment work. Product Description popup.authors popup.nrat_date 2020-04-02 Close