Search academic texts

Information × Registration Number 0205U000532, 0102U000331 , R & D reports Title Influence of the inhomogenous-strained semiconductor surface on properties of contact of surface-barrier Shottky structures popup.stage_title Head Peleschak R.М., Registration Date 31-01-2005 Organization Drohobych Ivan Franko State Pedagogical University popup.description2 The model of description of crystalline structures "metal - deformed semiconductor" and of redistribution of dot defects in an electric field induced by contact potential difference is proposed.It has been established that deformational effects enhance the process of electrodiffusive purification of pre-contact region of semiconductor from charged donors of ionized interstice impurities type of Cdi.The method of growing of monocrystals of telluride of cadmium and their solid solutions from a gas phase by two independent stages: synthesis of combination and preparation of charge, forming of a monocrystal, is proposed. Product Description popup.authors popup.nrat_date 2020-04-02 Close