Information × Registration Number 0205U004253, 0103U008792 , R & D reports Title Design of high speed LHIC in application to nanoelectronics popup.stage_title Head Sizov F.F., Доктор фізико-математичних наук Registration Date 11-03-2005 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 The new principal ion-implantation technology for SiGe layers and design of very-high-frequency (2-10 gHz) elemental base for digital and analogue very large integrated circuits, in particular, for high frequency communication systems, were investigated.5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close
Head: Sizov F.F.. Design of high speed LHIC in application to nanoelectronics. (popup.stage: ). Institute of Semiconductor Physics of NAS of Ukraine. № 0205U004253