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Information × Registration Number 0205U006862, 0103U000381 , R & D reports Title Electrical research of thinfilm multilayer structures produced on the base of widegap materials such as SiC and SiO2 popup.stage_title Head Lysenko V., Nazarov A., Registration Date 21-12-2005 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 It was discovered that the high-dose implantation of germanium into silicon dioxide with the consequent rapid thermal annealing resulted in the creation of considerable concentration of negative charge traps, while the implantation of the silicon with the similar annealing caused appearing of negative as well as positive charge traps. A technological equipment has been created and technological regimes for reactive magnetron sputtering of thin stoichiometric a Si:H films onto 100mm wafers have been found. Obtained films exhibit luminescent behavior in the visible spectrum. It was revealed, that electron traps at the 4H-n-Sіс/SіО2 interface near the edge of 4H-n-SіС conduction band consist of two different kinds of traps. The electrophysical behavior pecularities of the 4H-n-Sіс/SіО2 structures were explained by a phenomenological model of discharge of space-localized traps in the SіС/SіО2 transition layers. It was showed that the small doses of gamma-radiation cause an increase of charge carriers mobility in the front as well as in the back channels of thin film SOI MOSFETs. A decrease of surface states density at the buried oxide - silicon film interface was also observed. These phenomena are connected to the improvement of the structural and electrical properties of the interfaces of the silicon film with the gate and buried oxides. It was demonstrated that non-standard behavior of the transfer and output characteristics of thin film enhancement mode n-MOSFETs manufactured on the UNІBOND SOI wafers, can be explained by high-temperature charge instability in the buried oxide. Product Description popup.authors popup.nrat_date 2020-04-02 Close