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Information × Registration Number 0205U006864, 0103U000364 , R & D reports Title Mechanism of fabrication tehnology influence and external factors on the properties of semiconductor structures and functional elements of sensors systems of their base popup.stage_title Head Venger Evgen Fedorovich, Registration Date 21-12-2005 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Report on RDP: 460 pp., 1 part and separate report on patent research, 46 figures, 7 tables, 163 references. The goal of the investigations was study of the mechanisms of fabrication technology influence and external factors on the properties of semiconductor structures and functional elements of sensor systems on their base. As the objects of the research the A4 (Si,Ge and SiC compounds) semiconductor materials as well as A3B5 (Gas,InAs,InSb,AlN) , A2B6 (CdTe,CdS,CdSe,ZnS) and ternary compounds on their base and also different functional elements of the sensor electronics. For this purpose the X-ray-structural and chemical analysis, methods of the physical optics, acousto-electronic effects, luminescence spectroscopy, study of the photoelectric and galvano-magnetic phenomena was used. The technological conditions of the fabrication of the high-quality and sophisticated layer structures on the base of A2B6 compounds are determined as well as for the wide band and selective sensors of the UV radiation,the sophisticated technologies of the heterostructures fabrication are described which are perspective for the fabrication on their base the electronic devices of the sensor technique, the physical model of the chemico-mechanical formation processes is presented, the conditions for the fabrication of the InAs photodiodes with the improved parameters are determined, electro-physical properties of the A4, A3B5 and A2B6 materials and structures on their base were studied, growth technology of the AlN thin films by the method of magnetron sputtering was developed, the approbation of the technological equipment was carried out which is intended for the electron-beam cleaning of the Si crystals from the residual impurities in the conditions of the cosmic gravitation and cosmic vacuum, the influence of the ultrasound treatment on the ultrasound loading on the Ge, Si, CdMnHgTe semiconductor crystals and GeSi/Sx structures, the physical bases of the method of impurity concentration determination and defects in semiconductor materials for sensors were developed, their experimental testing and comparison with theory was carried out, temperature sensors were investigated. The physical base for the fabrication of the narrowband radiation sources for the middle and far IR range with the use of the semitransparent resonant structures as the emitting elements was created. The carried out research is accompanied by the detailed patent review on the directions which are considered in RDP. The results of the RDP can be used in the electronic industry for the creation of the different high-quality sensors. HETEROSTRUCTURES, SEMICONDUCTOR SENSORS, A4 A3B5, A2B6 COMPOUNDS, PHOTOTRANDUCERS, DEFECTS, ULTRASOUND, DIOD, PHOTOLUMINESNCE, SURFACE-BARRIER STRUCTURS, GALVANO-MAGNETIC PHENOMENA, SPECTRAL PHOTOSENSITIVITY Product Description popup.authors popup.nrat_date 2020-04-02 Close