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Information × Registration Number 0205U007143, 0103U000361 , R & D reports Title Physical phenomena in crystals and low dimensional structures based on A2B6 compounds and elementary semiconductors and development of new methods of creation of mentioned material and devices on thier basis. popup.stage_title Head SHEINKMAN Moisei Kivovich, Registration Date 22-12-2005 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Object of the investigation - ZnO, SiGe, Si monocrystals, Si/SiO2 layers, ZnCdSe/ZnSe nanostructures, heterotransistors with SiGe base. The purpose of the investigation - the clearing up of the mechanisms of a set of new physical phenomena in crystals and nanostructures based on II-VI compounds and elementary semiconductors, development and creation of physical basis of the growth technique of SiGe crystals with parameters satisfying the requirements of modern technology. Research techniques - optical, luminescent, electrical, photoelectrical, X-ray spectroscopy, EPR, noise spectroscopy. The mechanism of the photoluminescence in Si/SiO2 layers containing Si crystallites and the mechanism of the influence of cation vacancies on quantum dot self-organization process in ZnCdSe/ZnSe systems were established. The physical model of a lattice defect characterized by lower diffusion barrier as compared with a barrier for a vacancy F-center and a vacancy without electrons was proposed. It has been shown that alow frequency noise of a base curent in a SOI SiGe heterotransistor consists from a generation-recombination component and from two components of 1/f noise. The growth methods for opticlal germanium and SiGe crystals with Si content up to 5 % were developed. For the first time the analytical expressions for the components of a piezoresistance tensor of first order in n- and p-type Si crystals considering a dependence of a scattering time on deformation were deduced. The propositions for the development of investigation object - improvement of growth technology of monocrystals and epitaxial layers used for manufacture of different optoelectronic devices; using in sensors. Product Description popup.authors popup.nrat_date 2020-04-02 Close