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Information × Registration Number 0206U000202, 0104U003029 , R & D reports Title Scientific basis of increasing the measurement accuracy of parameters of the electron-beam superpure semiconductor silicon production technologies popup.stage_title Head Volodymyr A. Porev, Registration Date 17-01-2006 Organization Faculty of аircraft and space systems NTUU "KPI" popup.description2 The mathematical model of formation of the brightness field of the melted zone is created, taking into account the re-reflection of radiation. On the basis of this model the method of increasing the temperature accuracy has been developed. Product Description popup.authors popup.nrat_date 2020-04-02 Close
R & D report
Scientific basis of increasing the measurement accuracy of parameters of the electron-beam superpure semiconductor silicon production technologies
Head: Volodymyr A. Porev. Scientific basis of increasing the measurement accuracy of parameters of the electron-beam superpure semiconductor silicon production technologies. (popup.stage: ). Faculty of аircraft and space systems NTUU "KPI". № 0206U000202
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Updated: 2026-03-27


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