Registration Number
0206U002600,
0103U001104
, R & D reports
Title
Investigations and development of photorefractive devices and systems based on А2В6 semiconductor solid solutions with transitional elements: Mn, V, Ti, Ta, Zr etc.
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Head
Savchuk Andriy Iosypovych,
Registration Date
15-02-2006
Organization
Yuri Fedkovych Chernivtsi National University
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There were developed physical basics of reproducible technology of structurally-perfect CdTe single crystals doped by isovalent and amorphous impurities - Sn, Ge and also of its solid solutions - by components and impurities of 3d, 4f - elements. Photodiodes based on p-n-junctions and Schottki barriers for IR- and x- -radiations with parameters close to theoretically predicted were created on mentioned crystals and films. Maximum amplification of laser radiation equal to 120 was obtained on CdTe:Ge crystals with using of dynamic photorefractive lattices.
Product Description
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2020-04-02
