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Information × Registration Number 0206U002686, 0103U001514 , R & D reports Title Mechanisms of formation of thermoelectric properties in crystals and thin-film structures based on IV-VI semiconductors popup.stage_title Head Rogacheva Elena Ivanovna, Доктор фізико-математичних наук Registration Date 17-02-2006 Organization The Kharkov state polytechnical university popup.description2 Effect of various factors (type and concentration of dopant, deviation from stoichiometry, layer thickness, material and temperature of substrate, oxidation, etc.) on the thermoelectric properties of crystals, thin films and heterostructures based on IV-VI semiconductor compounds was established. The mechanisms of formation of thermoelectric properties were determined and recommendations for enhancement of thermoelectric efficiency by doping, deviation from stoichiometry and thin-film structure parameters were elaborated. Product Description popup.authors popup.nrat_date 2020-04-02 Close