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Information × Registration Number 0206U004636, 0103U004996 , R & D reports Title Physical properties of the technology of semiconductor structures, their electrical properties and devices on their base popup.stage_title Head Savchuk Andriy, Registration Date 06-03-2006 Organization Yuri Fedkovych Chernivtsi National University popup.description2 Experimental homo- and hetherojunctions, i.e. metal-semiconductor ones, with different band gap widths have been created on the base of the grown crystals. Investigations of the diodes and Schottki photodiodes, considered as basic X-ray and - photoreceivers, have been carried out. Technological approaches to epitaxial growth of narrow-gap structures on the base of the II-VI solid solutions with varying band gap width and predetermined distribution of atomic composition across their thickness have been elaborated. On the base of the grown structures with varying band gap width IR photoelectrical and optical elements (devices) have been created. Product Description popup.authors popup.nrat_date 2020-04-02 Close