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Information × Registration Number 0206U005548, 0104U009906 , R & D reports Title Inestigation of the interconnection of properties with the technologies of fabrication the cadmium diphosphide and zincum diarsenide popup.stage_title Head Fekeshgazi Ishtvan Vintseyevich, Registration Date 30-03-2006 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Object of researches were diphosphide cadmium and zincum diarsenide, from which made experimental samples of the field radiation correctors and extension the duration of lasers pulses generation and also the spatial - polarizing dividers of radiation flows without and with interference antireflective counting depositing on working surfaces. The purpose of work - on a basis of working out by the Byelorussian party of crystals diphosphide cadmium and zincum diarsenide to establish interconnection of refractive indices with technologies of receiving of diphosphide cadmium and zincum diarsenide crystals of high optical quality, and also to prepare a scientific and technical substantiation of an opportunity of creation on their basis of new production -space-polarisation dividers of flows of radiation without and with interference antireflective counting deposited on their working surfaces; stabilizers spatial - temporary distributions of a field of laser radiation and elements of prolangation the duration of pulses the solid-state lasers generation and to establish their operational parameters; synthes the structures of antireflective coatings and developing the technologies of their deposition on a surface of experimental samples of stabilizers spatial - temporary distributions of a field and extension of duration the pulses generation, and also to measure their specifications. By methods of researches were: polarizing researches of optical quality of crystals, nonlinear optics and laser spectroscopy, interference of light in unequal sicness multiplayer dielectric systems. - The measurements by оptico-polarizing methods of refractive indices dispertion of diphosphide cadmium and zincum diarsenide crystals and its connection with technologies of reception, it was esblished optimal conditions of its synthesis, their connections with basic components that of cultivation large-sized (up to 20 mm) monocrystals of high optical quality, suitable for manufacturing elements of laser engineering for flows of radiation by a diameter up to 15 mm. - Being based on anisotropy of connective forces between the layers of a crystal lattice, the technique of orientation of prepare samples from technological bauble is developed. The technique of opto-machinin the crystals is fulfilled. - By measuring of samples transmission, the transparency region 2 till 8-12 micron and anisotropy for a direction of distribution of light kа, kb of і kс and orientation of electric field parallel Е ||i and perpendicularly Е + і, in particularly along or perpendicularly to ctystallografic axis [001] for crystals CdP2 and [010] - for ZnAs2 were established. - The dispersion of refraction indesis for these directions and its influence on the optical characteristics of deposited on their surface interference of coatings were studed. - The participation in the work of 7 international conferences is accepted, 6 reports were made, 7 theses of the reports and 6 works on subjects of the project are published. Product Description popup.authors popup.nrat_date 2020-04-02 Close