Search academic texts

Information × Registration Number 0207U000599, 0101U006099 , R & D reports Title Interrelation between tunnel / thermoactivated recharging of heterostructure transition layer centers and charge transport in device structuries. popup.stage_title Head Lysenko Volodimir Sergievich, Registration Date 26-01-2007 Organization V.Lashkaryov Institute of Semiconductor Physics National Academy of Sciences of Ukraine popup.description2 The object of investigations: MOS-structuries, heterostructuries "amorphous SiC/ monocrystalline Si, bulk and SOI-transistors.The project's objective is to study the interrelation between electron processes in transition layers of SiO2/Si, SiC/Si structuries and charge transport in related devices (MOS-transistors and heterojunctions). The investigative techniques used are following: TSCR current analysis, current-voltage characteristic analysis, computer fitting. Current transport mechanisms in heterojunctions a-SiC/c-Si had been analyzed. The method of thermally stimulated sholder voltage shift had been proposed.Keywords:semiconductor, siO2-Si interface, ion implantation, defects, thermoactivated processes, amorphous SiC, current-voltage characteristics, MOS-transistor, cryogenic temperatures, activation energy. Product Description popup.authors popup.nrat_date 2020-04-02 Close