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Information × Registration Number 0207U000684, 0105U006824 , R & D reports Title The forming of epitaxy interface at Si-SiO2 and investigation of the properties at hydroxy and hydrate cover oxide firm popup.stage_title Head Lobanov Viktor V., Registration Date 31-01-2007 Organization Institute of Surface Chemistry of the National Academy of Sciences of Ukraine popup.description2 A scheme has been developed for preparation of atomically pure surfaces of Si(100) and Si(111) and conditions have been found providing minimal number of defects (steps, dots etc.). The processes have been examined of controlled oxidation of silicon surfaces and as well as formation of Si-SiO2 interface. Comparative characteristics have been obtained of Si and SiO2 surfaces by means of the method of spectroscopy of characteristic losses of electron energy. Density functional theory quantum chemical calculations carried out of consequent stages of oxidation of silicon surface face (100) justified the barrier-free mode of entire process and let it possible to evaluate their heat effects. The calculated frequencies of normal vibrations of the oxygen chemisorption structures on the (100) face gave an opportunity to differentiate their structural parameters. Product Description popup.authors popup.nrat_date 2020-04-02 Close