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Information × Registration Number 0207U000839, 0104U007699 , R & D reports Title Doped thin films of SiC nanocrystals : new materials for optics and electronics popup.stage_title Head Semenov Aleksandr Vladimirovich, Registration Date 13-02-2007 Organization Institute for Single Crystals Scientific and Technology Association "Institute for Single Crystals" National Academy of Sciences of Ukraine popup.description2 SiC films were obtained by the method of direct deposition from carbon and silicon fluxes with energies of 30-1500 eV. The films deposited at a substrate temperature of 600?C were characterized by structural and chemical disordering. With the rise of the substrate temperature from 50 to 800?C the film structure changes from amorphous to polycrystalline one. Under such conditions reproducible films can be obtained. It is shown that with the increase of the ion flux energy from 50 up to 110 eV (T=800?) the optical properties of SiC films can be controlled.5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close