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Information × Registration Number 0207U000840, 0105U003752 , R & D reports Title Investigation of the process of low-temperature formation of SiC films with nano-dimensional elements based on composition disordering under the conditions of cooling low-energy ions popup.stage_title Head Puzikov Vyacheslav Mikhailovich, Registration Date 13-02-2007 Organization Institute for Single Crystals Scientific and Technology Association "Institute for Single Crystals" National Academy of Sciences of Ukraine popup.description2 Developed and manufactured is the unit for direct deposition of ions which provides generation of ion-plasma flows of carbon and silicon without micro- and macro-inclusions. Established are three energy regions for direct low-temperature deposition of carbon and silicon ions which are characterized by: 1) minimal defects, 2) the excess of knocked-out carbon atoms and 3) the excess of knocked-out carbon and silicon atoms. The proposed approach can be the base for the low-temperature obtaining of defect-free SiC films and other systems under the conditions of deposition of high-energy particles.5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close