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Information × Registration Number 0207U002097, 0102U000269 , R & D reports Title Investigation of the physical properties of policryctalline films and bulk crystals of GaN modified by the ionizing irradiation. popup.stage_title Head Danilchenko B.A., Registration Date 15-01-2007 Organization Institute of physics NASU popup.description2 Within the framework of the project, experimental investigations were performed in the field of physics of wide-bandgap semiconductors. A new promising crystalline material - gallium nitride, GaN, - was the subject of investigation. In the course of the project, new information was obtained concerning the thermal, optical, and electrical properties of the investigated objects. Temperature dependence of thermal conductivity of GaN single crystals and optical properties (absorption spectra, luminescence spectra and kinetics) of GaN thin films and crystals were investigated. The principles of high-field transport of hot carriers in AlGaN/GaN heterostructures were studied, including the experiments at helium temperature. Under the pulsed ultraviolet laser excitation, photoconductivity of AlGaN/GaN heterostructures was investigated. The fast (subnanosecond) component of photoconductivity was discovered and interpreted.5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close