Search academic texts

Information × Registration Number 0207U002605, 0102U007066 , R & D reports Title Two-beam excitation spectroscopy of semiconductor nanostructures popup.stage_title Head Blonskyy I.V., Registration Date 06-02-2007 Organization Institute of physics NASU popup.description2 Combined impact of the quantum-size factor and the factor of structural disordering upon generation, transport, and recombination processes evolving in nano-Si of various structural forms is studied by means of photo- thermo-, and tunneling components of luminescence. Two new mechanisms of electrons’ excitation are revealed, which are inherent to silicon quantum dots and wires. Dependence of effectiveness of the Auger scattering on size and dimensiality of such substances is studied. A model of transport of electron excitations in undulated silicon quantum wires is developed, with which it is firstly explained the observed non-monotonity in the temperature dependence of the Becquerel’s decay factor of the luminescence tunneling component. A theoretical model explaining the long-term component of luminescence in nano-Si is suggested. Origin of the spatial separation of charge carriers in silicon quantum dots, and size dependence of the quantum efficiency of radiation are explained.5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close