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Information × Registration Number 0207U002764, 0103U007905 , R & D reports Title The study of the volumetric sapphire crystals growing technology of the preset profile for the needs of nanoelectronics. popup.stage_title Head Bletskan Dmytro Ivanovych, Registration Date 14-02-2007 Organization Uzhgorod National University popup.description2 The technology of industrial growing of rectangular form sapphire crystals was developed. This technology provides the output increase of effective crystal part for scission of plates with (0001) orientation to 50 %. The three methods of crystal scission on cylindrical interme-diates were proposed. The most productive method is excision with using diamond tubular auger. The nonde-structive control methods of intrinsic and impurity point defects in sapphire crystals and sapphire substrates were treated. With using ESR and nuclear activation method were established that during sapphire crystal growth in Mo-W crucibles take place the crystals contamination by molybdenum. Therefore the growth process must be car-ried out in tungsten crucibles. Product Description popup.authors popup.nrat_date 2020-04-02 Close