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Information × Registration Number 0207U004275, 0106U009110 , R & D reports Title Manufacturing of switching elements with memory popup.stage_title Head Mozol' P. O., Registration Date 14-02-2007 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The analysis of the literature data is carried out in the research fields of laser stimulated defect-formation and creation of a spatial potential relief in CdTe semiconductor. The occurrence of a tellurium film and formation of microsize structures were observed on the CdTe crystal surface at irradiation with nanosecond pulses of a ruby laser (hv = 1.78 eV) at the certain doze in the case of the light from the fundamental absorption spectrum. It is shown, that a tellurium film has island-like distribution character on the crystal surface and its thickness depends on irradiation doze. It is shown, that the formation of a tellurium film on the sample surface is due to the evaporation of more volatile component Cd from the subsurface layer as a result of laser irradiation. Thus, the subsurface layer of the material is depleted by cadmium, and an amorphous tellurium film on the samples surface is formed with following crystallization. On the basis of the analysis of the present literature data, it is revealed that the switching effect, which arises at irradiation of CdTe crystals, can be caused by the specific semiconductor properties to keep the conductivity excited by light or electric field, which exceeds the equilibrium conductivity in several times and it is kept during 10^-4-10^-6 s. The effect, revealed in the majority of both crystalline and chalchogenide semiconductors, is caused by the presence of macrodefects which result in the occurrence of potential barriers of the certain forms. Such defects are, for example, a agglomeration of point defects, inclusions of alien phases as metal or dielectric particles, and also boundaries of the doped area of samples. The technological documentations on the experimental fabrication of switching elements with memory on the basis of Te-CdTe is developed and experimental switching elements were made. Product Description popup.authors popup.nrat_date 2020-04-02 Close