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Information × Registration Number 0207U004529, 0104U008906 , R & D reports Title Research engineering "multilayer molecular-beam epitaxial structures CdxHg1-xTe with nanosized layers and optoelectronic devices on their basis popup.stage_title Head Sizov Fedor, Registration Date 12-04-2007 Organization Lviv branch Scientific and industrial concern "Nauka" popup.description2 There has been done the following work: ionic etching on special plant in high frequency (frequency 13, 76 MHz) smouldering discharge, which was localized in quasi closed volume. Depth of p-n junction bedding was estimated by thickness of etched layer for which an image of field dependence Hall coefficient restores for an outlet model. Another method of depth of p-n junction definition consisted in construction of dependence caused by ionic etching of increase in surface concentration of electrons ?NS (calculated for square unit of model) upon T = 77 K from thickness of etched layer which was determined basing on analysis of field dependences of Hall coefficient RH(B) by means of mobility spectrum methods. There were studied KRT films planted by means of liquid-phase epitaxy (RFE) methods and molecular-beam epitaxy (MPE). Carried out research of conversion of conductivity type upon ionic etching in RFE films and it was defined that conversion depth and electric parameters of converted layers didn't practically depend on energy of argon ions in range of 1-4 keV which corresponds with other author's data. Product Description popup.authors popup.nrat_date 2020-04-02 Close