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Information × Registration Number 0207U004636, 0104U003884 , R & D reports Title The investigation of the proceses of generation and transformation of the radiation defects in silicon and binary semiconductors. popup.stage_title Head Litovchenko Piotr Grigorievich, Registration Date 12-06-2007 Organization Institute For Nuclear Research Of National Academy Of Sciences Of Ukraine popup.description2 It was found that the introduction of germanium leaded to the increase of n-Si radiation hardness by a factor of 7. It was shown that the anneling of defect clusters is caused by the annihilation of vacancy tupe defects in clusters with interstitial defects. It is shown, that 60Co gamma-quanta and 1-MeV electrons irradiation GaP introduces non-radiating levels of radiative defects, which causes glow degradation. It has been shown, that the sollar cells made of poli-silicon of the grain structure have the higher radiation hardness to fast neutrons in comparision with analogous monocrystal elements.5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close