Search academic texts

Information × Registration Number 0207U005035, 0102U000087 , R & D reports Title Many-body effects in quantum well heterostructures popup.stage_title Head Tarasov Georgiy Grygorovych, Registration Date 27-02-2007 Organization V.Laskaryov Institute of Semiconductor Physics NAS of Ukraine popup.description2 The conditions of development of many-body effects in heavily doped quantum well heterostructures have been investigated under variable excitation density, temperature, and strength of magnetic field. The energy of hole localization is derived from the optical measurements. It is shown that magnetic field stabilizes the Fermi edge singularity. Magnetic field of 30 T applied in plane of quantum well strongly suppresses the inter-band recombination and strengthens the many-body excitonic transitions. It is studied experimentally the peculiarities of inter sub-band absorption under low temperatures in super-lattices In0.32Ga0.68P/In0.32Ga0.68As with compensated strain. A strong absorption is detected in the spectral range of 5.6-10.6 ?m corresponding to the transition from the first electronic sub-band to the second one. It has been established the energy gap of 370 meV and the electron effective mass of 0.06 m0 in the In0.32Ga0.68As quantum well. It is shown that strong plasmon-phonon excitations develop in the magnetic field. The channels of carrier relaxation in the high density InAs/GaAs quantum dot system are explored. The carrier transfer among the quantum dots of various sizes is described in terms of balance equation with account of the inter dots coupling. The regime of saturation is investigated under high excitation density of photoluminescence. It is shown that the many-body effects shift the emission band of quantum dots. The under barrier energy states in bilayer system of quantum dots with weak vertical correlation have been studied. It is shown a pronounced difference between the non-equilibrium carrier relaxation in the system of quantum dots with the additional confining barrier AlGaAs.56355635 Product Description popup.authors popup.nrat_date 2020-04-02 Close