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Information × Registration Number 0207U006201, 0104U009867 , R & D reports Title Characterisation of metal-insulator-semiconductor (Al-SiO2(a-C:H)-Si) structures by the techniques of induced current and deep level transient spectroscopy popup.stage_title Head Tretyak O.V., Registration Date 28-03-2007 Organization Taras Shevchenko Kiev university popup.description2 Deep level transient spectroscopy technique was implied to determine the energetics of deep traps in porous silicon (PS). The obtained experimental data confirms the existance of the gradients of the porosity and band gap energy for anodic PS. The autometed setup for investigation the ingomogeneity in semiconductor structures by induced current technique has been designed. This technique is able to estimate the homogeneity of surface barrier structure with PS interface. Product Description popup.authors popup.nrat_date 2020-04-02 Close