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Information × Registration Number 0207U006703, 0101U006546 , R & D reports Title Improvement of IR devices technology based on study of current and heat transmission processes with high spatial and time resolution popup.stage_title Head Malyutenko V.K., Registration Date 13-07-2007 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 Process of passing of current through light-emitting meza-structures based on InAsSb-alloys which radiate in infrared (IR) spectral range 3-5 microns was analysed. Three areas of localization of current (current crowding) was revealed, two-dimensional distributions of current in the base of the light-emitting diode and dependence of degree of thith localizaton on current amplitude and direction was calculated. It was established that the near-contact inhomogeneity causes local Joule heating and thus it is important for the thermal exchange between microstructure and heat sink, while the third area (located in the region of the p-n-transition) responds for the nonuniformity of light pattern. Due to use of unique equipment, namely IR microscope with high resolving ability and fast-scanning IR camera, the pattern of distribution of the light was measured, the losses of light caused by current crowding effect in p-n-transition region was calculated and the optimum designe of the device was proposed. As aresult, the optimum structure of IR light-emitting diode for 3-5 microns spectral range was fabricated and record emitting power was achieved. The device was based on double heterostructure InAsSb/InAs fabricated by liquid-phase epitaxy as flip-chip meza. Light-emitting diode of 300-micron-aperture in puls mode (50 us puls width and 25 Hz repetition rate) radiated more than 1 mW power at room temperature, that is record for such type of devices. A possibility of generation of a signal of negative contrast in relation to temperature of a surrounding also was shown. Product Description popup.authors popup.nrat_date 2020-04-02 Close