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Information × Registration Number 0208U000396, 0106U009602 , R & D reports Title "Development and introduction of technology of production of powerful high-voltage Silicon millimeter-wave (wavelength 3-4 mm) р-і-n diodes with the breakthrow voltage 1000-2000 Volt for the perspective radio engineering systems of the wide setting." popup.stage_title Head Boltovetc Mykolay Silovich, Registration Date 25-01-2008 Organization State Scientific-Reseach Institute "Orion" popup.description2 Si p-i-n diodes on the base of Si monocrystal with specific resistance of 1 кOm·сm were developed. The complete set of preliminary design and technological document was developed on 4 p-i-n diodes with the base thickness of 200 micron, with the contact diameter of 500, 1000, 2000, 2500 micron. The diode construction shows as Si mezastructures with hard gold leads, intended for embeding into microwave integrated circuits. The experimental samples of p-i-n diodes are made. Extensive test of Si p-i-n diodes are executed in the temperature interval up to 200°С. The main parameters (direct resistance, capacity, breakdown voltage) of diodes meet the modern world technical level. Product Description popup.authors popup.nrat_date 2020-04-02 Close