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Information × Registration Number 0208U000763, 0107U005784 , R & D reports Title Development of methods and apparatus for diagnostics of electronic engineering materials, laminated structures and micrielectronic devices based on Auger electronic spectroscopy popup.stage_title Head Romanyuk Boris Mikolayovich, Доктор фізико-математичних наук Registration Date 15-02-2008 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 The aim of researches was development of methods and equipment for diagnostics of materials of electronic engineering, layered structures on their basis and microelectronic devices with use Auger-electronic spectroscopy; research of ion sources, choice and manufacturing of ion source for the МВ-202 implanter and Auger-spectrometer; manufacturing and research of test samples for Auger-spectrometer by deposition thin layers with different element structure by plasma-chemical and thermal methods and development of technology of high-temperature impurity diffusion. For achievement of the purpose the different updatings of mass-spectrometry, pofilometry and other methods of research of thickness impurity distribution were used. The review of modern papers devoted to designs and modes of operations of ion sources is carried out. The requirements to ion sources are considered which are applied in the process of impurity implantation to the test samples. The choice of optimum ion source for Auger-spectrometerand МВ-202 implanter is executed. Ion source was manufactured and its testing was carried out. The set of test samples for Auger-spectrometer was manufactured by the methods mentioned. The analysis of opportunities of the Auger-spectroscopy method for determination of impurity concentration in materials of electronic engineering is carried out. It is shown that for realization of the quantitative analysis it is necessary to have a control sample (without additional impurity) and reference samples with impurity, concentration in which is determined by independent methods. The method of ion etching of insulating and semiconductor layers and precision control of their thickness is developed using mass-spectrometer and Auger-spectroscopy researches. Calibration investigations of the samples, which contain urgent impurity for electronic engineering were made. The comparison of results obtained by different methods for standard samples was carried out. Product Description popup.authors popup.nrat_date 2020-04-02 Close