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Information × Registration Number 0208U000922, 0107U005759 , R & D reports Title Development of growth methods for high resistive CdTe sigle crystals and Cd1-xZnxTe solutions for fabrication of detectors of ionizing radiation popup.stage_title Head Tomashik Vasyl Mykolayevich, Доктор хімічних наук Registration Date 03-03-2008 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 Synthesis of homogeneous Cd1-xZnxTe solid solutions according the chemical composition from the initial elements is developed. For making of detectors of ionizing radiation the developed Method of the Cd1-xZnxTe (x = 0,04; 0,1; 0,15 and 0,2) solid solutions single crystals growth by the directed crystallization of own fusions under high pressure of inert gas (HPB - high pressure Bridgman method) for the manufacturing of the ionizing radiation detectors was worked up. The arrangement for the chemical cutting of the ingot was modernized and a method of defectless partition of the Cd1-xZnxTe grown ingots onto the plates was developed as well as the operations of the chemical cutting and polishing of the plates were optimized. The analytical method of the Zn determination into the Cd1-xZnxTe solid solutions was worked up. The nature and kinetics peculiarities of the chemical dissolution of the CdTe, CdTe:Cl and Cd1-xZnxTe surfaces were determined. To obtain the high-quality polishing surfaces the etchant compositions were developed and optimized and optimum conditions and schedule of chemical mechanical and chemical dynamic polishing of thr CdTe and Cd1-xZnxTe solid solutions single crystals were offered. Keywords: Cd1-xZnxTe, HPB-method, single crystals, solid solutions, chemical cutting, chemical polishing. Product Description popup.authors popup.nrat_date 2020-04-02 Close