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Information × Registration Number 0208U000935, 0107U005746 , R & D reports Title Development of metods of laser-induced doping and formation of electrical barriers in CdTe crystal for dedectors of X- and gamma- radiation popup.stage_title Head Vlasenko O.I., Registration Date 05-03-2008 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 During implementation of project theoretical and experimental researches were conducted that touch development of sensible elements for detectors x-ray photography and gama of radiation on the basis of diodes, made on a base visokoomnogo semiconductor of CdTe. Physical and technological development of bar'ernikh structures, formed in the semiinsulating crystals of CdTe compensated a chlorine processes were studied, in particular, diodes with the contact of Shottki and with a p-n transition. The special attention was spared forming of p-n transition in the superficial area of CdTe by an impulsive laser radiation. Product Description popup.authors popup.nrat_date 2020-04-02 Close