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Information × Registration Number 0208U002020, 0107U007235 , R & D reports Title Elaboration of new high-sensitive semiconductor radiation detector materials popup.stage_title Head Gnatento Yu.P., Доктор фізико-математичних наук Registration Date 14-01-2008 Organization Institute of physics NASU popup.description2 The semi-insulating (?=106–109 ??сm) CdTe crystals doped by V were grown. For the first time the photo-EMF effect (holographic current) was investigated and micromechanism of holographic current appearance in СdTe:V taking into account real defect structure of the crystal was established. The nature and energy structure of the impurity centers and intrinsic defects in the CdTe:V та Cd1-хHgхTe:V crystals were determined. It was shown that the electron processes in such crystals are fast-acting and occur in sub-nanosecond range. The nature of electron traps was determined. Complex optical and photoelectric investigations of Sn2P2S6 crystals and Pb1-xCdxI2 solid solutions were carried out. The diagram of the defect levels energy and band-to-band electron transitions in Sn2P2S6 crystals was suggested.56355635 Product Description popup.authors popup.nrat_date 2020-04-02 Close