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Information × Registration Number 0208U002419, 0107U008875 , R & D reports Title Development and production of tensosensitive structures for semiconducting integrated circuits of pressure sensors, capable for operation at ultralow temperatures together with facilities for their testing. popup.stage_title Head Mitin Vadym Fedorovych, Registration Date 28-01-2008 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 Ge-GaAs structures have been investigated at ultralow temperatures and in high magnetic fields. New large negative magnetoresistance effect have been found, theoretical simulation of this effect have been performed. Tensosensitive Ge-GaAs structures have been developed for pressure sensors, which are capable for operation at low temperatures. Cryogenic experimental facility for testing of pressure sensors at low temperature has been produced. Product Description popup.authors popup.nrat_date 2020-04-02 Close