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Information × Registration Number 0208U004587, 0108U010568 , R & D reports Title New high-efficient electrogyration materials on the base of Sn2P2S6xSe6(1-x) ferroelectrics-semiconductors family for application in optoelectronics popup.stage_title Head Mys Oksana Grygorivna, Доктор фізико-математичних наук Registration Date 11-12-2008 Organization Institute of Physical Optics named after O.G. Vlokh of Ministry of Education and Science of Ukraine popup.description2 It was discovered that Sn2P2S6 crystals possess the highest value of electrogyration coefficients among all known electrogyration materials. It was shown that switching of ferroelectric domain structure under the action of the electric field, enclosed in the direction of spontaneous polarization, can cause the change of optical activity, which can be used for switching of modes and visualization of domain structure. It was shown that these crystals can be used as effective optoelectronics materials. It was shown that these crystals are effective magnitooptical materials as possess very high value of Verde constant, which is 0.0371 rad/Em. On the base of carried out researches the value of effective coefficient of Faraday effect was determined.5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close