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Information × Registration Number 0208U004719, 0107U006518 , R & D reports Title 14.02/011"Self-Organization Processes under Epitaxial Growth of A3B5 Nanostructures in Al2O3 Pores and Optoelectronic Properties of Structures Obtained" popup.stage_title Head Osinsky Vladimir Ivanovich, Registration Date 15-12-2008 Organization State Enterprise "Research Institute of Microdevices" STC "Institute for Single Crystals" of NAS of Ukraine popup.description2 Investigations performed show that galvanostatic regime is most prospective approach to form the porous matrices of anodized aluminium oxide with regular pores. The modes of selective epitaxial growth for effective filling Al2O3 pores with GaN nanostructures are developed. Optical properties of nanosystems obtained are different across sample surface. Under stimulation the surface consists of bright areas with high luminescence intensity (sharp band 3,46 eV responsible for interband transitions in GaN) separated one from another by dark areas (two peaks 3,43 eV and 3,25 эВ explained by stacking faults). Product Description popup.authors popup.nrat_date 2020-04-02 Close