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Information × Registration Number 0208U005024, 0107U005752 , R & D reports Title Development and creation of sensors of high pressure based on Si popup.stage_title Head Korbutyak Dmytro, Доктор фізико-математичних наук Registration Date 18-03-2008 Organization V.Laskaryov Institute of Semiconductor Physics NAS of Ukraine popup.description2 The main principles for development of high pressure sensors capable for operation in a wide range of deformations and temperatures were developed. Production technology and design for the sensors based on Si crystals and Ge-GaAs heterostructures was developed. The tensosensitive structures and prototypes of the sensors were produced. Their operating parameters were studied. Product Description popup.authors popup.nrat_date 2020-04-02 Close