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Information × Registration Number 0208U005226, 0107U005744 , R & D reports Title Development of growth methods of polycrystal structures and sensors based on III-V compounds popup.stage_title Head Shutov Stanislav Victorovich, Registration Date 01-04-2008 Organization V.Laskaryov Institute of Semiconductor Physics NAS of Ukraine popup.description2 Basic mechanisms of heat and mass transfer processes in the method of epitaxy from a submicron layer of a solution-melt in a temperature gradient have been considered. The model, mathematical description and computer support of the processes description have been developed. Basic requirements concerning technological conditions of crystallization and tools for its provision have been determined based on the modeling results. Examination of models of heat and mass transfer, carried out on Ga - GaSb system, has allowed to make a correction of technological modes of the layers obtaining. An original method, equipment and production accessories for carrying out the experiments of obtaining of device structures as well as investigations of influence of technological factors on the properties of polycrystalline layers have been developed. Carrying out of experimental processes of gallium antimonide growing from a submicron layer of a solution-melt has confirmed a correctness of the models built as well as good agreement with output data of the computer modeling results of the processes. An improved accessory has allowed to reproduce more carefully technological parameters of layer crystallization process for sensor device structures. Experimental samples of GaSb layers with parameters suitable for device structures manufacturing of thermophotovoltaic converters have been obtained. Methods of additional control of crystallization conditions using forced cooling of a substrate by technological gas flow as well as electroepitaxy have been offered, experimentally realized and investigated. Particular results of experimental investigations and developments are covered by Patents of Ukraine. Product Description popup.authors popup.nrat_date 2020-04-02 Close