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Information × Registration Number 0208U005644, 0107U007759 , R & D reports Title Research and development of technology processes for mm-wave diode mesa structures forming on epitaxial heterostructure of n+-n- n+ III-nitride on sapphire. popup.stage_title Head Boltovets Мykola, Registration Date 09-07-2008 Organization State Scientific-Reseach Institute "Orion" popup.description2 As a result of this work performance scientific and technical solutions have been developed and manufacturing method of the diode structures based on III-nitrides epitaxial structures has been completed. Prototypes of Gunn diodes structures based on III-nitrides epitaxial structures were manufactured and researched. The prototypes of Gunn diodes manufacturing methods were based on gallium nitride epitaxial structures of n+-n-n+ type grown from a sapphire monocrystal substrate. Thickness of layers was 0,3 microns, 2,5 microns and 2,5 microns and carrier density was respectively equaled 5-7·10^18 cm^-3, 1·10^17 cm^-3 and 5-7·10^18 cm^-3. The flowsheets of GaN Gunn diodes manufacturing were developed and key technological processes were fulfilled. Comprehensive research of Gunn diodes performance was carried out at the temperature range of 77-700 К. Product Description popup.authors popup.nrat_date 2020-04-02 Close