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Information × Registration Number 0208U005654, 0106U013107 , R & D reports Title Development of Binary and Ternary Metal Oxides Gate dielectric System with Less than 1.0 nm Equivalent Oxide Thickness for MOS Technology and Methods of Analysis of the Electrical Characteristics popup.stage_title Head Smertenko Petro Semenovych, Registration Date 15-07-2008 Organization V.Laskaryov Institute of Semiconductor Physics NAS of Ukraine popup.description2 The current-voltage characteristics (CVC) of MDM structures with Y2O3 dielectric thin films, deposited by electron beam sputtering at room temperature have been investigated. The experimental CVCs have been analyzed on the basis of dimensionless sensitivity a, that gives the detailed information about the fine behaviour of curves. The processing technique for theoretical and experimental results of CVC investigation has been developed on the base of differential approach. The modelling of theoretical and experimental characteristics and determination of analytical approximations are in the base of such technique. The technique is experimentally approved using the modelling of CVC of MDM structure with Y2O3 dielectric thin film, deposited by electron beam sputtering at room temperature. Possible mechanisms of charge flow are estimated. Recommendations concerning application of techniques for processing of results theoretical and experimental investigation of CVC of MDM and МОS structures are developed.5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close