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Information × Registration Number 0208U006236, 0107U005768 , R & D reports Title Development of technology and creation of graded band-gap sensors of ultraviolet and visible radiation for metrological monitor means popup.stage_title Head Pavelec Sergiy Yuriyovych, Registration Date 02-07-2008 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 The objective of the work is development of manufacturing technology and fabrication of high-quality radiation sensors whose operating parameters fit with the present-day requirements. This would make possible metrological applications of such sensors. The task of the project was to retain all the positive features [that have been attained for the small-area (10 mm2) Сu1.8S-CdS photoconverters (PC)] when developing sensors of considerably bigger area (100 mm2). Solving of the above problems required substantial updating of the hot-wall reactor and optimization of sensor design (with improved topology of the upper and lower current-collecting electrodes). Use of graded-gap layers enabled us to reach the planned objectives by solving the problems of reduction of recombination currents in the space-charge region and making ohmic contacts to high resistant materials (CdTe and ZnS). To study the sensor parameters, we made a test bench for taking band characteristics. The performed technological works and investigations of the metrological sensor properties showed that the Сu1.8S-CdS PC was more promising for UV, while the Сu1.8S-CdSе PC was more appropriate as a stable metrological sensor with extended spectral sensitivity region. The main operating parameters of the UV sensors meet completely the requirements specification and fit with the present-day requirements. Product Description popup.authors popup.nrat_date 2020-04-02 Close