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Information × Registration Number 0208U006534, 0108U009043 , R & D reports Title High-resolution X-ray diffractometry of Cz-Si single crystals after irradiation by high-energy electrons and gamma-rays popup.stage_title Head Dovganyuk Volodymyr Vasyl'ovych, Registration Date 10-12-2008 Organization Yuri Fedkovych Chernivtsi National University popup.description2 In work is determinate the formation of regularities of diffraction curves, isodiffuse contours and spatial distribution of X-ray intensity as individual types of defects as well complexes of defects (dislocation loops, clasters differents symetry) in monocrystals by modifying methods of numerical solution the basic equations of the dynamic theory of X-ray scattering; It is known a basic mechanisms of structural changes and choice of defect structure models of Cz-Si crystals with a few types of dominant microdefects which would allow correctly to describe the results of influencing of irradiation by high-energy particles and gamma-rays on the defect structure of Si single crystals; It is create a new algorithm of investigation of data new high-level informative methods of nanoscale defects diagnostics. Product Description popup.authors popup.nrat_date 2020-04-02 Close