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Information × Registration Number 0208U006550, 0106U004199 , R & D reports Title Transients and self-organizing during crystallization in conditions of mismatched crystal-chemical parameters of materials. popup.stage_title Head Shutov Stanilav, Registration Date 10-12-2008 Organization Kherson national technical university popup.description2 Complex experimental investigations of GaAs layers selective growth on Si substrates using epitaxial lateral overgrowth technique as well as growing in capillary slit by forced cooling of solution-melt with periodical temperature fluctuations were carried out. The method of GaAs epitaxial layers obtaining on Si substrates oriented by (100), (110), (111) was developed based on the experiments. The experimental data obtained allowed to make corrections in the models of heteroepitaxial film island growth developed and in the conditions of interface stability of liquid and solid phases during heteroepitaxy of multicomponent layers based on thermodynamic stability analysis of the system. The models are based on excitation of the liquid phase due to partial substrate dissolution and the excitation relaxation by crystallization of protective layer equilibrium to a solution-melt. Product Description popup.authors popup.nrat_date 2020-04-02 Close